Trinitri company was established in 2006 to develop a new production technology of semiconductor devices based on gallium nitride (GaN) (Patent, pending).

The new approach is based on use of bulk GaN crystal with a low dislocation density and epi-ready surface for growing device structures. After the growth process a thin film containing the device structure is lifted off from bulk GaN using Laser Stealth Slicing (LSSTM) technology (Patent number 2,469,433, Patent number 2,459,691). Thin film with device structures is transferred to a carrier substrate for post-growth processing.  Thus, we have a method of creating  device structures in the form of thin films, which is especially important for expensive bulk GaN substrates and silicon carbide.